Comparison Analysis Of N-Channel And P-Channel SOI / Bulk Finfets
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AUTHOR(S)
V Vijayalakshmi , Dr. B. Mohan Kumar Naik
KEYWORDS
nFinFET, pFinFET, SOI FinFET, Bulk FinFET, Drain Current.
ABSTRACT
In this research paper, a 3 dimensional device simulation of 20 nm n-channel and p-channel SOI FinFET and Bulk FinFET have been studied. The electrical parameters such as electrostatic potential, electric field, current density, transfer characteristics, output characteristics, drive current, OFF state current and transconductance are investigated based on the various bias voltages. The transfer characteristics of SOI FinFETs are compared with that of bulk FinFETs. Based on the comparison analysis SOI FinFETs are more dominant over bulk FinFETs because of large ION/IOFF ratio in wide circuit applications and semiconductor memories.
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