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IJSTR >> Volume 4 - Issue 2, February 2015 Edition

International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616

Characterization Of Microwave Obtained Zno Thin Films By RF Magnetron Sputtering

[Full Text]



Roger Ondo-Ndong, Hugues Martial Omanda, Honore Gnanga, Brice Sorli, Alain Foucaran



Index Terms: Zinc oxide; thin films, X-ray diffraction, crystalline property, refractive index, Electromechanic coupling coefficient.



Abstract: We have grown ZnO thin films on glass and Si (001) substrates by r.f magnetron sputtering using metallic zinc target. The crystalline property of the films were observed to vary with the structural properties used. X-ray diffraction (XRD) measurement showed that the substrate temperature ZnO films exhibited preferred c-axis oriented (002). A study has been made of the influence parameters prepared on the film refractive index. They exhibited the refractive index of 1.97, a c-axis orientation of below 0.32° FWHM of X-ray rocking curves and an energy gap of 3.3 eV at room temperature. It was found that a RF power of 50 W, target to substrate distance 70 mm, very low gas pressures of 3.35x10-3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity. The network analyzer shows losses are -5dB at a k33 = 0.26 experimental.



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