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IJSTR >> Volume 2- Issue 12, December 2013 Edition

International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616

Resistivity And Grain Size Dependent Magnetoelectric Effect In (Y) Ni0.85Cd0.1Cu0.05Fe2O4 + (1-Y) Batio3 ME Composites

[Full Text]



P. B. Belavi, G. N. Chavan, L. R. Naik, V. L. Mathe, R. K. Kotnala



Index Terms: Composites, XRD, microstructure, EDX, Multiferroic, Magnetic moment, ME conversion factor.



Abstract: The Magnetoelectric (ME) composites with composition (y) Ni0.85Cd0.1Cu0.05Fe2O4 + (1-y) BaTiO3, (0.0 < y < 1.0) were synthesized by conventional solid state reaction method. The presence of constituent phases was confirmed by X-ray diffraction studies. Scanning electron microscopy was used to study the surface morphology of the composites. The average grain sizes were found to increase with ferrite content in the scanning electron micrographs of the composites. The percentage of constituent phases in the composites was rechecked and confirmed by EDX measurements. The decrease in dc resistivity with increase in temperature indicates semiconducting nature of the composites. The magnetic properties of the composites such as saturation magnetization and magnetic moment studied using vibration sample magnetometer are found to increase with ferrite content and are in agreement with theoretical values but magnetic transition temperature was found to decrease with ferrite content. However, the saturation polarization and remnant polarizations are found to decrease with increase of frequency as well as ferrite content in the composites. The maximum ME conversion factor of 16.8 mV/cm.Oe was observed for the composites with 15 mole % of ferrite and 85 mole % ferroelectric in the composites. High resistivity and low grain size of the composite exhibits high ME response at the same time these composites exhibits good multiferroic and magnetoelectric properties with ferrite content. These ME composites are suitable for preparing flexible ME devices in electronics industries.



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