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IJSTR >> Volume 9 - Issue 11, November 2020 Edition



International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616



A Robust, High Performance And Low Power (HPLP) 8T SRAM Cell For Iot Applications

[Full Text]

 

AUTHOR(S)

Sargunam TG, C.M.R.Prabhu, Lim Way Soong

 

KEYWORDS

SRAM Cell, Low Power, High Performance, Delay, Stability, Robust, IoT,

 

ABSTRACT

The significant development of memories with embedded on-board SRAM has been increasing tremendously for the current Internet-of-Things (IoT) applications. The high performance and low power SRAM cells are critically important and play a vital role for the data computations in any IoT application. The SRAM Cells are generally important for the contemporary VLSI systems and applications. The on-board SRAM memory demand is increasing day by day with the additional requirements of less power consumption, improved stability, improved performance, and overall energy efficiency. This research work presents a High Performance and Low Power (HPLP) SRAM cell with 8 transistors. The presented cell is designed in CMOS technology and simulation was carried out using Cadence Virtuoso EDA tool. The suggested HPLP SRAM cell’s write power analysis confirms that 47% write power is reduced. The write ability has been improved and the write delay has also been improved by 24% for write operations. Furthermore, the HPLP cell is robust and stable in worse environmental conditions with range of temperature from -50oC to 150oC.

 

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