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IJSTR >> Volume 3- Issue 10, October 2014 Edition

International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616

Electrical Properties Of Intrinsic Amorphous Carbon Films From Ethanol Precursor

[Full Text]



A. Ishak, M. Rusop



Index Terms: Intrinsic amorphous carbon, Ethanol precursor, Negative bias, Chemical vapor deposition



Abstract: The intrinsic amorphous carbon (a-C) thin films were successfully prepared by via a bias assisted pyrolysis-chemical vapor deposition (CVD) using ethanol as a carbon source. The effect of deposition temperature on the electrical and structural properties was investigated. The a-C thin films were characterized by current voltage (I-V) measurement, surface profiler, and atomic force microscopy (AFM). The AFM measurements and conductivity result show the surface roughness and resistivity of a-C films decreases with increasing of deposition temperatures .Linear forms were obtained from aurum and a-C film contact. The resistivity of intrinsic a-C thin films in the range of 250oC to 550oC is 22x108Ω.cm, 2.01x108Ω.cm, 4.44x107Ω.cm, 7.26x107Ω.cm, 6.53x107Ω.cm, 4.97x107Ω.cm, and 4.32x107Ω.cm, respectively. Meanwhile, its conductivity is 2.07x10-8 Scm-1, 1.58x10-8 Scm-1, 2.25x10-8 Scm-1, 1.38x10-8 Scm-1, 1.53x10-8 Scm-1, 2.01x10-8 Scm-1, and 2.32x10-8 Scm-1, respectively. The highest and lowest photo responses were found at 350oC, and 500oC, respectively. This electrical properties result showed the custom-made of bias assisted pyrolysis-CVD can produced the semiconducting a-C film comparably with other conventional deposition method.



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