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IJSTR >> Volume 3- Issue 10, October 2014 Edition

International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616

Electrical Properties Of Nitrogen Doped Amorphous Carbon Films Fromethanol Precursor

[Full Text]



A. Ishak, M.Rusop



Keywords: Amorphous carbon; Ethanol precursor; Negative bias; Boron doping; Carbon film Carbon solar cell



Abstract: The nitrogen doped amorphous carbon (a-C:N) thin films were synthesized for the first time by using mixing of nitrogen gas, argon and ethanol precursor by bias assisted pyrolysis-CVD in the range of 250oC to 550oC with fixed negative bias of -50V in 1h deposition. The a-C:Nthin films were characterized by current-voltage measurement, UV/VIS spectrophotometer, surface profiler, and atomic force microscopy. The resistivity of a-C:N thin films in the range 250oC-550oC was 4.97x107Ω.cm, 2.66x105Ω.cm 1.974x104Ω.cm,3.63x103Ω.cm, and 4.44x103Ω.cm, and 1.73x104Ω.cm, respectively. It was found that a-C:N thin filmshave responded with photon by created electron hole pair where the highest photo responseof a-C:N film was found at 350oC.The substrate of deposition temperatures with the help of constant dc voltage influenced the electrical properties of a-C thin films.



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