International Journal of Scientific & Technology Research

Home About Us Scope Editorial Board Blog/Latest News Contact Us
10th percentile
Powered by  Scopus
Scopus coverage:
Nov 2018 to May 2020


IJSTR >> Volume 2- Issue 11, November 2013 Edition

International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616

Optical And Electrical Properties Of P-Type Si<100> Modification In Visible Region For Silicon Based Microphotonics

[Full Text]



Kifah Q. Saleh



Index terms: surface texture studies, spectroscopy studies, Optical & Electrical properties of indirect energy gap materials, size-dependent absolute quantum yield, Nano- laser active medium & thermal effect on material behavior.



Abstract: The development of Silicon surface texture would revolutionize the growing field of Microphotonics and its applications in different fields .The objective of this study is to modify the Optical and Electrical properties of Silicon in visible region at room temperature. So, for that purpose, we have used thermal treatment method with applied M-field "1000G.". We have found that p-type Si is more response to this method. Optical and Electrical study were carried out using CW photoluminescence emission technique (Ar+ Laser emitting at 514.5 nm), Ellipsometry (632.8nm), AFM and IV. We were obtained increasing emission intensity in band [~ (2.0-1.6) eV] and an improvement in PL emission profile. We were recorded irregular behaviors in extinction coefficient values of treated samples. In this study, we recorded at the first time different behavior in IV and change in surface texture which provides new surface profile for improvements of Si technology.



[1]. O. Bisi, S.U. Campisano, L. Pavesi and F. Priolo, Silicon based microphotonics, 1999.

[2]. D.R.Vij, Luminescence of solids, 1998.

[3]. T. H. Gfroerer,Photoluminescence in analysis of surface and interfaces, 2000.

[4]. L. Levesque, phys.Educ.35, 5, 2000.

[5]. J.N.Hodgson, Optical Absorption and dispersion in Solids, 1970.

[6]. G.E. Jellison Jr., ,Optical functions of silicon determined by two-channel polarization modulation ellipsometry ,Optical Materials,Vol 1, Issue 1, 41–47,1992.

[7]. Melanie L. Mastronardi, Florian Maier-Flaig, Daniel Faulkner, Eric J. Henderson, Christian Kübel, Uli Lemmer, and Geoffrey A. Ozin, Size-Dependent Absolute Quantum Yields for Size-Separated Colloidally-Stable Silicon Nanocrystals, Nano Lett., 12 (1), 337–342,2012.

[8]. H.S.Chen,J.J.Chiu and T.P.Perng, ON THE PHOTOLUMINESCENCE OF Si NANOPARTICLES ,Mater.Phys.Mech.4; 62-66,2001.

[9]. AV Hamza, MW Newman, PA Thielen ,Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100), Appl. Phys. Lett., Vol.79 ,18, 2973 - 2975 ,2001.