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IJSTR >> Volume 4 - Issue 12, December 2015 Edition



International Journal of Scientific & Technology Research  
International Journal of Scientific & Technology Research

Website: http://www.ijstr.org

ISSN 2277-8616



Modelling Defects Acceptors And Determination Of Electric Model From The Nyquist Plot And Bode In Thin Film CIGS

[Full Text]

 

AUTHOR(S)

Demba Diallo, Moustapha Dieng, Dr. Alain Kassine Ehemba

 

KEYWORDS

Index Terms: Defects and acceptors in semiconductor CIGS, numerical modelling, Nyquist plot, SCAPS, Solar cells.

 

ABSTRACT

Abstract: The performance of the chalcopyrite material Cu(In,Ga)Se2 (CIGS) used as an absorber layer in thin-film photovoltaic devices is significantly affected by the presence of native defects. Multivalent defects, e.g. double acceptors or simple acceptor, are important immaterial used in solar cell production in general and in chalcopyrite materials in particular. We used the thin film solar cell simulation software SCAPS to enable the simulation of multivalent defects with up to five different charge states.Algorithms enabled us to simulate an arbitrary number of possible states of load. The presented solution method avoids numerical inaccuracies caused by the subtraction of two almost equal numbers. This new modelling facility is afterwards used to investigate the consequences of the multivalent character of defects for the simulation of chalcopyrite based CIGS. The capacitance increase with the evolution of the number of defects, C- f curves have found to have defect dependence.

 

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