IJSTR >> Volume 4 - Issue 1, January 2015 Edition

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AUTHOR(S)

A. Ishak, Ahmad Nurrizal Muhamad, M. Rusop

KEYWORDS

Keywords: Carbon; Palm-oil; Positive bias; Boron; Custom-made

ABSTRACT

Abstract: Boron doped amorphous carbon (a-C:B) film fabricated on n-type silicon using waste palm oil precursor by low positive bias voltage is presented. The rectifying curve were found for all samples under dark measurement revealed that those samples were p-type semiconductor. The +30 V was found the optimized of the electronic properties with the open circuit voltage (VOC), current density (JSC), fill factor (FF) and efficiency (%) were approximately 0.259034 V, 1.299456 mA/cm2, 0.240011, and 0.080788 %, respectively. The conversion efficiency of a-C:B has been improved under the influenced of low positive bias.

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